Process for fabrication of dielectric optical waveguide devices
US4071383A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 11, 1976 |
| Grant date | Jan 31, 1978 |
| Priority date | — |
| Expiry date | May 11, 1996 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/925
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a process for fabrication of dielectric optical waveguide devices by utilizing selective epitaxial growth. Concentrated energy such as an electron or laser beam is focused on a predetermined region on the surface of a substrate during the epitaxial growth with the application of molecular beams so that the mixed crystal grown in the irradiated region may have a chemical composition different from that of the mixed crystal grown on the non-irradiated region. Since this process permits to overlaying the embedded waveguides one upon another, complex optical waveguide devices can be fabricated in a simple manner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.