Method of making high resistance cermet film
US4071426A · kind A · utility
8Cited by
7References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 26, 1976 |
| Grant date | Jan 31, 1978 |
| Priority date | — |
| Expiry date | Nov 26, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01C17/12
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A cermet film includes metal particles in an insulator with the metal particles having an average diameter of from about 30A to about 120A. The cermet film has a high resistivity, and low temperature coefficient of resistivity, and is stable under electric fields of up to 10.sup.5 volts/cm. The cermet film can be formed by co-sputtering the metal and the insulator onto a substrate. The sputtered cermet film is then annealed in a reducing atmosphere whereby its resistivity is increased without a corresponding change in its temperature coefficient of resistivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.