Patent · US Expired

MOS input buffer with hysteresis

US4071784A · kind A · utility

14Cited by
3References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 12, 1976
Grant dateJan 31, 1978
Priority date
Expiry dateNov 12, 1996

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH03K3/3565
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

An MOS input buffer circuit includes an input connected to the gate electrode of an enhancement mode input MOSFET. The drain of the input MOSFET is connected to the output of the input buffer circuit. The source of the input MOSFET is connected to the drain of a second depletion mode MOSFET having its source connected to ground and its gate connected to a V.sub.DD voltage conductor. A load circuit is coupled between the V.sub.DD voltage conductor and the output, and consists of an enhancement mode MOSFET and a depletion load MOSFET coupled in series between output and V.sub.DD voltage conductor. A third depletion mode MOSFET has its drain connected to the V.sub.DD voltage conductor, its source connected to the source of the input MOSFET, and its gate connected to the output. The positive gain (or negative slope) portion of the switching characteristic of the input buffer circuit extends substantially all the way between the high and low output levels.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.