Method for manufacturing semiconductor devices
US4073055A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 1977 |
| Grant date | Feb 14, 1978 |
| Priority date | — |
| Expiry date | Feb 22, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for the manufacture of semiconductor devices comprises the steps of forming a number of mutually electrically isolated semiconductor islands on an insulating substrate and cutting a semiconductor wafer, made of semiconductor elements and substrate, along its dicing line to provide a number of semiconductor chips, the method characterized in that additional semiconductor islands are formed on the insulating substrate simultaneously with, or after, the formation of the first-mentioned semi-conductor islands so that each substantially surrounds the chip. The method permits very easy mask alignments for photoengraving as well as a clear judgment as to whether or not the formation of contact openings has been completed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.