Semiconductor read-only memory
US4074238A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 12, 1976 |
| Grant date | Feb 14, 1978 |
| Priority date | — |
| Expiry date | Mar 12, 1996 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C17/12
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A read-only memory of lateral type comprising a plurality of information memory circuits connected in parallel with one another across a first line and a second line. In each of the information memory circuits, a first insulated-gate field effect transistor of either the depletion mode or the enhancement mode, selected depending on the information to be stored, is connected in series with a second insulated-gate field effect transistor of enhancement mode. The read-only memory further comprises reading means for reading the mode of the first insulated-gate field effect transistor in each information memory circuits, so that an output signal according to the mode of the first insulated-gate field effect transistor can be read out from the memory by the reading means.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.