Semiconductor rectifier device

US4074303A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Hansjochen Benda
• Peter Huber · Neubiberg, DE

Key dates

• Filing date: Jan 20, 1976
• Grant date: Feb 14, 1978
• Expiry date: Jan 20, 1996

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S257/914

Abstract

A semiconductor rectifier device including an inner layer of semiconductor material of a first conductivity type and an outer layer of first conductivity type but having a higher doping concentration than the inner layer with the outer layer formed with a plurality of islands of opposite conductivity type which do not extend completely through the outer layer so as to provide a semiconductor rectifier device which has greatly improved resistance to high voltage breakdown particularly in the reverse direction.