Liquid phase epitaxy method of growing a junction between two semiconductive materials utilizing an interrupted growth technique
US4075043A · kind A · utility
5Cited by
11References
5Claims
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Key dates
| Filing date | Sep 1, 1976 |
| Grant date | Feb 21, 1978 |
| Priority date | — |
| Expiry date | Sep 1, 1996 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/912
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a junction in semiconductive materials to improve the spectral response of the junction in photovoltaic detectors. A first layer of semiconductive material is grown, by epitaxy technique, on a substrate of semiconductive material of the same conductivity type. Growth of the first layer is discontinued and the temperature is changed. Then a second layer of opposite conductivity type is grown on the first layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.