Electronic thin film circuit unit and method of making the same
US4075416A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 27, 1976 |
| Grant date | Feb 21, 1978 |
| Priority date | — |
| Expiry date | Jan 27, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/85
Abstract
After a valve metal layer on an insulating substrate has been metallized by sputtering on two layers of copper separated by an intermediate layer of iron, nickel or cobalt, and the combined circuit and component pattern has been etched out, followed by selectively etching away the metallization over the resistance components of the circuit, electroless deposited nickel and gold layers are successively applied to the remaining metallization and a solder layer is then applied on top by contact with liquid solder.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.