Electroresistor and method of making same
US4075452A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 7, 1976 |
| Grant date | Feb 21, 1978 |
| Priority date | — |
| Expiry date | Oct 7, 1996 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49099
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A process for producing high precision electrical resistance elements and electrical resistance elements produced thereby are disclosed. The process includes the step of etching a masked metallic layer bonded to an electrically insulating substrate for a time sufficient to etch away substantially all the masking material and a predetermined portion of the metallic material to produce a high precision electrical resistance element having a predetermined ohmic value. Preferably, the masking material has an erosion rate under ion bombardment greater than the erosion rate of the metallic layer and the thickness of the masking material is established as a predetermined function of the metallic layer to be etched away.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.