High speed FET employing ternary and quarternary III-V active layers
US4075651A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 29, 1976 |
| Grant date | Feb 21, 1978 |
| Priority date | — |
| Expiry date | Mar 29, 1996 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/139
Abstract
A field effect transistor (FET) preferably employs an epitaxial layer of indium gallium arsenide as its active layer. On the surface of the active layer, ohmic source and drain contacts are spaced from respectively opposite sides of a Schottky barrier (rectifying) gate electrode. The active layer is grown over an epitaxial transition layer which is graded from gallium arsenide to indium gallium arsenide and is doped with chromium or oxygen to be semi-insulating. The transition layer is in turn formed over a bulk, intrinsic layer of gallium arsenide. High speed operation of the FET is obtainable because the active layer has excellent electron transport characteristics. Other materials suitable for the active layer are indium arsenide phosphide and indium gallium arsenide phosphide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.