Irradiation for rapid turn-off reverse blocking diode thyristor
US4076555A · kind A · utility
5Cited by
3References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 17, 1976 |
| Grant date | Feb 28, 1978 |
| Priority date | — |
| Expiry date | May 17, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/263
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The turn-off time of a reverse blocking diode thyristor is decreased without significantly effecting other electrical characteristics by irradiating with a radiation source to a dosage corresponding to between about 4 .times. 10.sup.13 and about 2 .times. 10.sup.14 electrons/cm.sup.2 and preferably to between about 6 .times. 10.sup.13 and about 2 .times. 10.sup.14 electrons/cm.sup.2 with 2 MeV electron radiation source. Preferably the radiation source is electron radiation with an energy greater than 1 MeV.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.