Sense/write circuits for bipolar random access memory
US4078261A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 2, 1976 |
| Grant date | Mar 7, 1978 |
| Priority date | — |
| Expiry date | Jan 2, 1996 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/416
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A bipolar sense-write circuit is provided for sensing voltage levels representative of a logical "1" or a logical "0" stored in a flip-flop storage cell and for writing voltage levels into the flip-flop storage cell. The sense portion of the sense-write circuit is essentially independent of the write portion thereof. The sense circuitry portion of the sense-write circuit includes circuitry for biasing a pair of bit lines at substantially equal voltages at all times, except during a write cycle, to a voltage which facilitates sensing of a selected storage cell and which also results in the write circuitry being essentially electrically isolated from the sense-bit lines during a read cycle. During a write cycle, the read circuitry is effectively disabled so that the bit lines are at voltages determined by the write circuitry, and the read circuitry is effectively isolated from the sense-bit lines during the write cycle, and the write circuitry applies an increased voltage to one of the sense-bit conductors. The independence of the sense portion and write portion of the sense-write circuits results in elimination of undesirable interaction, especially write recovery problems, between …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.