Semiconductor photodetector
US4079405A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 1975 |
| Grant date | Mar 14, 1978 |
| Priority date | — |
| Expiry date | Jun 24, 1995 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
A semiconductor photodetector comprising a first semiconductor layer having N-type conductivity; a second semiconductor layer having N-type conductivity, disposed in the vicinity of the first semiconductor layer and having a resistivity higher than that of the first semiconductor layer; a third region having P-type conductivity, disposed in the vicinity of the second semiconductor layer and having a thickness smaller than that of the second semiconductor layer; a first main electrode kept in ohmic contact with the first semiconductor layer; and a second main electrode kept in ohmic contact with a portion of the third region, the surface of the third region serving as a light receiving surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.