Method for manufacturing a transistor
US4079505A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 21, 1976 |
| Grant date | Mar 21, 1978 |
| Priority date | — |
| Expiry date | Jan 21, 1996 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49004
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method of manufacturing a transistor which includes an emitter pattern and a base pattern and provides a predetermined current amplification factor, and said method includes a step of measuring a current amplification factor of a monitor transistor during the manufacturing process, the characteristic feature of said method includes the steps of forming a monitor transistor pattern providing the same amplification factor as the semi-conductor device to be manufactured, providing additional portions to an emitter pattern and a base pattern of said monitor transistor pattern, contacting a probe of the measuring apparatus to said additional portions and effecting the measurement of the amplification factor of the monitor transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.