Solar cells and photovoltaic devices of InP/CdS
US4081290A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 2, 1976 |
| Grant date | Mar 28, 1978 |
| Priority date | — |
| Expiry date | Apr 2, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Heterodiodes showing excellent potential for use in solar cells and photoelectric devices consist of junctions of p-type indium phosphide and n-type cadmium sulfide. These heterojunctions can be formed either from single crystal or from polycrystalline semiconductor material. The former type junction when incorporated in a solar cell exhibits promise for applications such as in space vehicles. The latter type junction as used in a solar cell has potential for large scale power generation. A chemical vapor deposition process for producing polycrystalline p-type indium phosphide films for incorporation into such a power producing device is disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.