Method of manufacturing a semi-insulating silicon layer
US4081292A · kind A · utility
19Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 19, 1976 |
| Grant date | Mar 28, 1978 |
| Priority date | — |
| Expiry date | Apr 19, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Silicon ions are implanted in a silicon dioxide layer on a silicon substrate so that the dioxide layer is converted into a semi-insulating layer having an improved passivation property.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.