Bistable semiconductor component for high frequencies having four zones of alternating opposed types of conductivity

US4081821A · kind A · utility

Assignee

• BBC Brown, Boveri & Company Ltd. · CH

Inventors

• Jozef Cornu · Stekene, BE
• Roland Sittig · Umiken, CH

Key dates

• Filing date: Dec 19, 1975
• Grant date: Mar 28, 1978
• Expiry date: Dec 19, 1995

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/60

Abstract

A bistable semiconductor component for high frequencies with a semiconductor chip includes a sequence of at least four zones of alternating opposed types of conductivity. The outer zones form the emitter zones and are more heavily doped than the two inner zones. The base zones are so doped that with a voltage V.sub.R smaller than or at most equal to the maximum inverse voltage V.sub.RS applied in the reverse direction across the two emitter zones, the shortest distance W between the two blocking layers formed at the two outer junctions is less than the diffusion length L.sub.B of the charge carriers in the base zones.