Avalanche photodiode with reduced avalanche breakdown voltage
US4083062A · kind A · utility
24Cited by
6References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 8, 1977 |
| Grant date | Apr 4, 1978 |
| Priority date | — |
| Expiry date | Feb 8, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/225
Abstract
An avalanche photodiode has a rectification barrier formed by an n.sup.+ -layer and a p-type layer of a low doping concentration. A thin p-layer having a higher doping concentration than a p.sup.- -layer is inserted between the p.sup.- -layer and a .pi.-layer, whereby the avalanche breakdown voltage of the photodiode is lowered considerably.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.