Method of manufacturing a semi-insulating silicon layer
US4084986A · kind A · utility
35Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 19, 1976 |
| Grant date | Apr 18, 1978 |
| Priority date | — |
| Expiry date | Apr 19, 1996 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/958
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An oxygen or nitrogen ion beam is implanted into a polycrystalline silicon or in an amorphous silicon layer, or a single crystal device body or layer, on a semiconductor substrate to an extent sufficient to convert the polycrystalline silicon layer, the amorphous layer or the single crystal device body or layer into a semi-insulating layer having a resistivity of 10.sup.7 to 10.sup.11 ohm-cm, which has improved passivation property.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.