Patent · US Expired

Process for the production of a thin-film circuit

US4085011A · kind A · utility

3Cited by

6References

3Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Wilfried Juergens · Munich, DE
Manfred Roschy
Alois Schauer · Kleinmachnow, DE

Key dates

Filing date	Oct 15, 1976
Grant date	Apr 18, 1978
Priority date	—
Expiry date	Oct 15, 1996

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S205/92
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A thin-film circuit which includes temperature-compensated RC elements consisting of an AlTa alloy layer having approximately 3-17 at % tantalum in aluminum, which is sputtered or vapor deposited onto a non-conductive substrate, is produced by a process in which the AlTa alloy layer is deposited in an operative, reactive gas mixture, containing at least one of the gases O.sub.2, CO.sub.2, and N.sub.2 and the TC.sub.R value is established by the tantalum component of the alloy layer and/or partial pressure of the reactive gas, and the TC.sub.C value of the capacitors formed from the AlTa alloy layer is established by tempering to be at least approximately oppositely equal to the TC.sub.R value.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.