Method and apparatus for controlling the removal, by means of ion etching, of a thin layer from a substrate
US4085022A · kind A · utility
13Cited by
2References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 28, 1977 |
| Grant date | Apr 18, 1978 |
| Priority date | — |
| Expiry date | Jan 28, 1997 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/54
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for controlling the removal, by means of ion etching, of a thin layer or regions of the layer as determined by masks, from a substrate of a sample which has a chemical composition different than that of the layer to be removed. During the ion etching process, an electrical signal which changes after the removal of the thin layer is derived from the substrate or from its mount, or from an electrode disposed in the vicinity of said substrate and this electrical signal is utilized to control an arrangement which influences the ion bombardment of the surface of the sample.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.