Formation of pattern using acrylamide-diacetoneacrylamide copolymer
US4086090A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 1975 |
| Grant date | Apr 25, 1978 |
| Priority date | — |
| Expiry date | Sep 22, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J9/2271
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention affords a process for forming a pattern having a surface area substantially equal to or smaller than area of apertures of shadow-mask through which beams pass on a photoresist film, which contains an acrylamidediacetoneacrylamide copolymer and a water-soluble aromatic bisazide compound, by exposing said photoresist film to light through a mask having the pattern and then developing the film. The use of said photoresist film for the preparation of a phosphor screen of a color picture tube of a black matrix or black stripe type does not require a special technique such as post-etching of a shadow mask and makes it possible to form a three primary color phosphor pattern having a surface area substantially equal to or smaller than the area of apertures of the shadow mask through which lightbeams pass, without mutual "bridging" between phosphor dots. Thus, an excellent phosphor screen of a color picture tube of a black matrix or black stripe type can be prepared.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.