Production of high radiance light emitting diodes
US4086126A · kind A · utility
1Cited by
2References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 27, 1977 |
| Grant date | Apr 25, 1978 |
| Priority date | — |
| Expiry date | May 27, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/013
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
For aligning holes in substrates with the light emitting regions of light emitting diodes, particularly Burrus type diodes, an etchant based on an alkaline peroxide solution is ejected or sprayed onto the masked surface of the substrate. The etchant is selective and also avoids production of insoluble oxides in partially etched holes, as often happens in conventional processes. The invention is particularly applicable to producing holes through substrates to align optical fibres with the light emitting regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.