Batch process providing beam leads for microelectronic devices having metallized contact pads
US4086375A · kind A · utility
26Cited by
10References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 7, 1975 |
| Grant date | Apr 25, 1978 |
| Priority date | — |
| Expiry date | Nov 7, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/033
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A monometallic batch process for forming beam leads of a preferred metal such as aluminum or gold. The process is applied to a wafer of finished microelectronic devices already having metal contact pads of the same preferred metal. Where aluminum is the desired metal, high deposition rates are used to minimize aluminum oxide contamination. High yield is achieved by forming the beam leads to have an elevated cantilevered configuration, by deep scribing of the wafer and, when desired, by providing an energy absorbing cushion to reduce the effect of collisions between chip edges and beam leads.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.