Single level masking process with two positive photoresist layers
US4088490A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 1976 |
| Grant date | May 9, 1978 |
| Priority date | — |
| Expiry date | Jun 14, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/0574
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
This single level masking process includes the use of two layers of a positive photoresist. A pattern is formed in the first layer of photoresist. This photoresist pattern is heated and polymerized to a degree which permits it to be resistant to attack when covered with a second layer of the same positive photoresist, that is, the first photoresist pattern will maintain its integrity. After the heat treatment, the first layer pattern is substantially insensitive to actinic radiation and is easily stripped with conventional solvents. A pattern is formed in a second layer of photoresist that is different from the pattern formed in the first layer. After a first metal is deposited on portions of the substrates exposed in the second layer pattern, the second layer pattern is removed. A second metal is deposited on the portions of the substrate exposed in the first layer pattern and then that pattern is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.