Method of making semiconductor superlattices free of misfit dislocations
US4088515A · kind A · utility
90Cited by
9References
33Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 4, 1975 |
| Grant date | May 9, 1978 |
| Priority date | — |
| Expiry date | Apr 4, 1995 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/938
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of growing superlattice crystals containing alternating layers of two semiconductor materials in which misfit and threading dislocations are eliminated by growing the layers of superlattice crystal to some thickness less than that which will generate new dislocations, and matching the average lattice parameter of the superlattice with that of substrate so misfit dislocations between the superlattice and the substrate are not formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.