Memory device utilizing ion beam readout
US4088895A · kind A · utility
Inventor
Key dates
| Filing date | Jul 8, 1977 |
| Grant date | May 9, 1978 |
| Priority date | — |
| Expiry date | Jul 8, 1997 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C17/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The invention is a memory for use in computing machines, in which the presence of a stored bit of information in a substrate is detected by a scanned ion beam of high brightness focused to a very small diameter. Bits of 4000 Angstrom dimension may be written in times as short as 100 nanoseconds by means of ion beams, and read out in times shorter than one nanosecond. A memory with such a bit size having a capacity of 10.sup.8 bits occupies 4 .times. 4 mm.sup.2 of substrate surface. By detecting the charge of high-energy ions transmitted through a thin substrate, bits smaller than 1000 Angstroms in dimension may be detected with good signal-to-noise ratio in less than 1 nanosecond.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.