High power semiconductor diode
US4089020A · kind A · utility
11Cited by
6References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 16, 1976 |
| Grant date | May 9, 1978 |
| Priority date | — |
| Expiry date | Apr 16, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor diode consists of a low resistivity n conductivity type semiconductor substrate, a high resistivity n conductivity type semiconductor layer, formed on the surface of the substrate, a high resistivity p conductivity type semiconductor layer, whose thickness is smaller than the diffusion length of electrons, formed on the n conductivity type layer, a metal electrode forming a Schottky barrier contact with the p conductivity type layer, and an electrode forming an ohmic contact with the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.