Patent · US Expired

Silicon oxide/silicon nitride mask with improved integrity for semiconductor fabrication

US4091169A · kind A · utility

19Cited by

9References

16Claims

0Family size

Assignee

International Business Machines Corporation · US

Inventors

Armin Bohg · Altensteig, DE
Eckehard Ebert
Erich Mirbach · Sindelfingen, DE

Key dates

Filing date	Sep 7, 1976
Grant date	May 23, 1978
Priority date	—
Expiry date	Sep 7, 1996

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/25
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor dielectric layer formed of silicon nitride having a uniform dispersion of carbon therein for providing reduced intrinsic tensile stresses of less than 10 .times. 10.sup.9 dyn/cm.sup.2.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.