Process for forming porous semiconductor region using electrolyte without electrical source
US4092445A · kind A · utility
28Cited by
4References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 4, 1976 |
| Grant date | May 30, 1978 |
| Priority date | — |
| Expiry date | Nov 4, 1996 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/96
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process is disclosed for forming a porous region in a semiconductor device. In the process, a region of a relatively high impurity concentration is formed at a desired region of a semiconductor body of a lower impurity concentration. The semiconductor body is dipped into an electrolyte along with an electrode. The electrode is connected to the semiconductor body, whereby the high impurity concentration region is converted into a porous region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.