Method of monitoring the machining by ion bombardment of a piezoelectric wafer
US4092588A · kind A · utility
10Cited by
4References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 2, 1977 |
| Grant date | May 30, 1978 |
| Priority date | — |
| Expiry date | Mar 2, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/085
Abstract
The present invention relates to the monitoring of the machining of a wafer of piezoelectric material by a beam of charged particles. The monitoring method is performed by measuring and displaying the complex voltage-current relationship produced by the electrical excitation of the wafer using a variable-frequency measuring signal applied to electrodes carried by the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.