Semiconductor rib waveguide optical modulator with heterojunction control electrode cladding
US4093345A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 27, 1976 |
| Grant date | Jun 6, 1978 |
| Priority date | — |
| Expiry date | May 27, 1996 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2201/125
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Formation of an optical modulator in an optical rib waveguide configuration in an epitaxial semiconductor layer is facilitated by using an electrode cladding (electrically conducting-optically transparent) layer for contacting the rib portion of the epitaxial layer. The electrode cladding layer is essentially a polycrystalline compound semiconductive material of suitably low refractive index and is advantageously characterized by a relatively high (0.4 to 1.0 volt or more) heterojunction potential barrier height at the epitaxial layer. The electrode cladding layer results in relatively low optical waveguide cladding loss as well as good electrode contact, thereby facilitating the application of a modulating electric field into the epitaxial rib waveguide during operation. The electrode cladding layer can also serve as a mask for controllably forming the rib portion with a predetermined rib height in the epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.