Positive working thermally stable photoresist composition, article and method of using
US4093461A · kind A · utility
54Cited by
13References
23Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 18, 1975 |
| Grant date | Jun 6, 1978 |
| Priority date | — |
| Expiry date | Jul 18, 1995 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0233
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A positive working, thermally stable photoresist, comprising a light-sensitive orthoquinone diazide or naphthoquinone diazide and a polyamic acid condensation product of an aromatic dianhydride and an aromatic di-primary amine, and a support carrying a layer of said photoresist. After exposure, the image is developed in the layer with an alkaline aqueous developer and is unaffected by heating to 500.degree. C, thus allowing the use of the photoresist layer for plasma and sputter-etching as well as ion implantation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.