Patent · US Expired

Method for synthesis of III-V compounds

US4093704A · kind A · utility

1Cited by
4References
9Claims
0Family size

Assignee

Inventor

Key dates

Filing dateOct 15, 1976
Grant dateJun 6, 1978
Priority date
Expiry dateOct 15, 1996

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S420/903
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

The invention relates to a method for the synthesis of a semiconductor compound comprising at least one element of column III of the periodic table of Mendeleev, and an element of column V having a vapor pressure higher than that of element(s) III at the synthesis temperature of the said compound, and according to which, in a closed space, a liquid mass of element(s) III, placed in a first zone of said space which is heated at relatively high temperatures and is contacted with vapors obtained by evaporation of element V, said element V being placed in a second zone of the said space in a non-gaseous form, the evaporation temperature of element V being higher than that of the coldest point provided in a third zone of the said space, and the said first zone being situated between the second and the third zone.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.