Device for cathodic sputtering at a high deposition rate
US4094764A · kind A · utility
50Cited by
6References
1Claims
0Family size
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Key dates
| Filing date | Sep 13, 1976 |
| Grant date | Jun 13, 1978 |
| Priority date | — |
| Expiry date | Sep 13, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3402
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The target of a device for cathodic sputtering at a high deposition rate on a substrate placed within a pumped enclosure is brought to a negative potential with respect to an anode. A gas is admitted at a pressure P into the space formed between the target and the anode, a high gas-pressure gradient being established between the target and the substrate. A magnetic field H is produced in a direction parallel to the target surface located opposite to the substrate and a suppressor screen is placed around the target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.