Composite JFET-bipolar transistor structure
US4095252A · kind A · utility
14Cited by
1References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 27, 1976 |
| Grant date | Jun 13, 1978 |
| Priority date | — |
| Expiry date | Dec 27, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/761
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A JFET is coupled in parallel with a bipolar transistor to produce a composite structure that has improved signal transfer characteristics in certain circuit applications. While useful with discrete devices, the combination is readily achieved in integrated circuit form.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.