Combination glass/low temperature deposited Si.sub.w N.sub.x H.sub.y O.sub. z
US4097889A · kind A · utility
38Cited by
10References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 1, 1976 |
| Grant date | Jun 27, 1978 |
| Priority date | — |
| Expiry date | Nov 1, 1996 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/114
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including a body of semiconductor material with a metallic conductor disposed thereon has a combination glass/low-temperature-(typically 300.degree. C) deposited Si.sub.w N.sub.x H.sub.y O.sub.z passivating overcoat with improved crack and corrosion resistance. This nitride is formed over the conductor, with the glass over the nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.