Photocathodes
US4099198A · kind A · utility
37Cited by
4References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 14, 1976 |
| Grant date | Jul 4, 1978 |
| Priority date | — |
| Expiry date | May 14, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J9/12
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The input surface of a photocathode consisting of a membrane of p-type silicon is modified to improve it's sensitivity. The p-type concentration is locally increased and the surface is coated with silicon nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.