Self-aligned epitaxial method for the fabrication of semiconductor devices
US4101350A · kind A · utility
35Cited by
6References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 26, 1976 |
| Grant date | Jul 18, 1978 |
| Priority date | — |
| Expiry date | Oct 26, 1996 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/026
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In the fabrication of semiconductor devices, a method is provided which includes the steps of selectively doping a semiconductor substrate of one conductivity type to form therein discrete regions of opposite conductivity type, followed by selective epitaxial growth to fill the windows of the diffusion mask, whereby the epitaxially grown regions are inherently characterized by exact alignment with the doped regions. The self-aligned epitaxial structure is then subjected to further processing in accordance with numerous alternate schemes to provide a wide variety of devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.