Method of casting silicon
US4101624A · kind A · utility
8Cited by
1References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 6, 1974 |
| Grant date | Jul 18, 1978 |
| Priority date | — |
| Expiry date | Mar 6, 1994 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01B33/02
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Disclosed is a method of casting silicon metal. Silicon metal expands upon solidification. According to the disclosed method a void volume of from 1 to 10 percent of the silicon metal, basis molten silicon metal, is established within the molten silicon metal. The void volume is capable of being decreased in volume upon the solidification of the silicon metal. In this way, the increase in volume of the silicon metal upon solidification is offset.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.