High thermal conductivity substrate
US4104344A · kind A · utility
113Cited by
6References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 12, 1975 |
| Grant date | Aug 1, 1978 |
| Priority date | — |
| Expiry date | Sep 12, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high thermal conductivity substrate is formed by making a sintered diamond composite and thereafter modifying the electrical properties of the composite by leaching graphite and other non-diamond materials from the composite and subsequently infusing the leached composite with material having known electrical properties. Alternatively, a diamond composite having high thermal conductivity known electrical properties is prepared and subsequently leached to remove graphite and other materials which interfere with the known electrical properties of the composite material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.