Field effect pentode transistor
US4104673A · kind A · utility
3Cited by
2References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 7, 1977 |
| Grant date | Aug 1, 1978 |
| Priority date | — |
| Expiry date | Feb 7, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/873
Abstract
A field effect pentode transistor, which provides a gain over an extremely broad band of frequencies is disclosed. The transistor has source and drain electrodes defined by ohmic contacts, a first gate input control electrode defined by a Schottky-barrier, a screen electrode, and a second control gate Schottky-barrier electrode. The screen electrode is an ohmic contact located between the first and second gate control electrodes; and the second control electrode is located between the screen electrode and the drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.