Ceramic material of low thermal expansion coefficient and method of manufacturing the same
US4105456A · kind A · utility
4Cited by
4References
8Claims
0Family size
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Key dates
| Filing date | Jan 12, 1977 |
| Grant date | Aug 8, 1978 |
| Priority date | — |
| Expiry date | Jan 12, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for producing ceramics to be used as substrates and packages of semiconductor devices, which having a thermal expansion coefficient close to that of silicon used as chip or wafer material of large scale integrations and a mechanical strength and thermal conductivity equal to those of alumina, wherein zircon and clays such as kaolin, ball clay and the like and an additive of one of Li.sub.2 O, TiO.sub.2 and ZnO and another of CoO, Co.sub.2 O.sub.3, Co.sub.3 O.sub.4 and MgO are mixed, molded and fired.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.