Chemical vapor deposition methods of depositing zinc boro-silicated glasses
US4105810A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 1976 |
| Grant date | Aug 8, 1978 |
| Priority date | — |
| Expiry date | Jun 3, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/09701
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An alkyl compound of zinc is reacted with alkyl compounds or alkoxyl compounds of boron and silicon in the presence of oxygen, thereby to deposit on a substrate zinc borosilicate glass film through a chemical vapor deposition process. The outlet nozzle of a raw material supply conduit for introducing the raw material compounds into a reaction zone is opened in the direction substantially in parallel with a surface of the substrate on which the glass film is to be deposited so that raw materials may be well mixed at the reaction zone. The glass film thus produced has a uniform thickness and a homogeneous composition of the constituents over an area at least of 40 mm extending from the nozzle and is suited for use as protection films for semiconductor devices and dielectric layer for a thin film capacitor on an industrial base.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.