Semiconductor devices
US4106051A · kind A · utility
14Cited by
4References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 22, 1975 |
| Grant date | Aug 8, 1978 |
| Priority date | — |
| Expiry date | Jan 22, 1995 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/147
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having an ohmic contact including a metal layer of molybdenum or tungsten on a first polycrystalline silicon layer, is provided with a second polycrystalline silicon layer on the metal layer, to prevent the subsequent oxidation of the metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.