Producing high efficiency gallium arsenide IMPATT diodes utilizing a gas injection system
US4106959A · kind A · utility
2Cited by
8References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 6, 1976 |
| Grant date | Aug 15, 1978 |
| Priority date | — |
| Expiry date | Jul 6, 1996 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/936
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The operating frequency of an IMPATT diode depends on the width of the depletion region formed during operation. The frequency of high efficiency GaAs IMPATT diodes comprising a non-uniformly doped depletion region contacted by a rectifying barrier can be more precisely fixed by forming a "clump" of charge at exactly the depth below the surface contacted by the rectifying barrier corresponding to the desired depletion region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.