Process for etching holes
US4106975A · kind A · utility
19Cited by
4References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 1977 |
| Grant date | Aug 15, 1978 |
| Priority date | — |
| Expiry date | Jun 30, 1997 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B41/91
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method for etching at least one aperture having a defined crystallographic geometry in single crystals which includes masking the crystal to protect predetermined portions thereof from being etched, and then anisotropically etching with a mixture of sulfuric acid and phosphoric acid.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.