Ion beam implantation-sputtering
US4108751A · kind A · utility
89Cited by
3References
13Claims
0Family size
Inventor
Key dates
| Filing date | Jun 6, 1977 |
| Grant date | Aug 22, 1978 |
| Priority date | — |
| Expiry date | Jun 6, 1997 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/48
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Material is deposited onto and implanted into a substrate by directing a beam of ions against a target, comprised of the material to be deposited, so as to sputter neutral particles and ionized particles from the target towards the substrate. The ionized particles are accelerated to energies sufficient to penetrate the substrate and be implanted therein and provide a strong bond. Sputter cleaning of the substrate surface by particles of sufficient energy also takes place.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.