Lateral bipolar transistor

US4109272A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Heiner Herbst · Haar, DE
• Ruediger Mueller · Munich, DE

Key dates

• Filing date: May 21, 1976
• Grant date: Aug 22, 1978
• Expiry date: May 21, 1996

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D10/311

Abstract

A lateral bipolar transistor has a silicon film which is epitaxially deposited on an electrical insulating substrate. The silicon film is doped with impurities of a first conductivity type such that a portion of the film may be utilized as a base zone. Within the base zone an emitter zone and a collector zone are formed of the second conductivity type. A highly doped zone of the second conductivity type is produced by deep implantation at a position which is contiguous and below the base zone, below the emitter and collector zones, and at a boundary between the silicon film and the electrical insulating substrate. An insulating zone over the film and a conductive layer over the base zone are also provided. The conductive film over the base zone together with the highly doped zone below and contiguous with the base minimize surface recombination and increase device gain.