Growth of semiconductor compounds by liquid phase epitaxy
US4110133A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 21, 1977 |
| Grant date | Aug 29, 1978 |
| Priority date | — |
| Expiry date | Apr 21, 1997 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B19/063
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of growing semiconductor compounds which are formed from elements of group III with elements of group V by liquid phase epitaxy. A suitable solvent is provided in contact with a source of the compound to be grown, the solution is heated to a predetermined temperature and the solute is allowed to come to equilibrium with the solvent. The solution is then subjected to a rapid, relatively small decrease in temperature to produce supersaturation of the solution. The temperature is then maintained substantially constant and, after a predetermined first period of time at the constant temperature, the solution is brought into contact with a substrate on which the compound is to be grown for a predetermined second period of time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.